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AUIRLL2705 - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • Advanced Planar Technology.
  • Low On-Resistance.
  • Logic Level Gate Drive.
  • Dynamic dv/dt Rating.
  • 150°C Operating Temperature.
  • Fast Switching.
  • Fully Avalanche Rated.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

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Datasheet preview – AUIRLL2705

Datasheet Details

Part number AUIRLL2705
Manufacturer Infineon
File Size 530.74 KB
Description Power MOSFET
Datasheet download datasheet AUIRLL2705 Datasheet
Additional preview pages of the AUIRLL2705 datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE AUIRLL2705 Features  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
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