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AUIRLS4030-7P - Power MOSFET

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Optimized for Logic Level Drive.
  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Logic Level Gate Drive.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

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Datasheet preview – AUIRLS4030-7P

Datasheet Details

Part number AUIRLS4030-7P
Manufacturer Infineon
File Size 670.30 KB
Description Power MOSFET
Datasheet download datasheet AUIRLS4030-7P Datasheet
Additional preview pages of the AUIRLS4030-7P datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE Features  Optimized for Logic Level Drive  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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