Infineon Technologies AUIRLU024Z
Power MOSFET
FEATURES
● Logic Level● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
DESCRIPTION
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. VDSS RDS(on) ID D AUIRLR024Z AUIRLU024Z HEXFET® Power MOSFET typ. max. 55V 46m 58m 16A D G Gate S G D-Pak AUIRLR024Z D Drain S GD I-Pak AUIRLU024Z S Source Base part number AUIRLU024Z AUIRLR024Z Package Type I-Pak