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AUIRLU3114Z - Power MOSFET

This page provides the datasheet information for the AUIRLU3114Z, a member of the AUIRLR3114Z Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Logic Level Gate Drive.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

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Datasheet preview – AUIRLU3114Z

Datasheet Details

Part number AUIRLU3114Z
Manufacturer Infineon
File Size 689.71 KB
Description Power MOSFET
Datasheet download datasheet AUIRLU3114Z Datasheet
Additional preview pages of the AUIRLU3114Z datasheet.

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Full PDF Text Transcription

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  AUTOMOTIVE GRADE Features  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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