Infineon Technologies BAL99
Silicon Switching Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltageForward current Peak forward current Surge forward current, t = 1 µs Total power dissipation TS ≤ 54°C VR VRM IF IFM IFS Ptot Junction temperature Tj Storage temperature Tstg Thermal Resistance Parameter Symbol Junction - soldering point2) RthJS 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance Marking JFs Value Unit 80 V 85 250 mA - 4.5 A 370 mW 150 °C -65 ... 150 Value Unit ≤ 260 K/W 1 2007-04-19 BAL99...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage V(BR) 85 - -V I(BR) = 100 µA Reverse current VR = 70 V VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C IR µA - - 1 - - 30 - - 50 Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA VF mV - - 715 - - 855 - - 1000 - - 1250 AC Chara...