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BAR64-02V
Low signal distortion, surface mount RF PIN diode
Product description
This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF voltages, and is best suited for frequencies as high as 6 GHz. Its nominal 50 μm I-region width, combined with the typical 1.55 μs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics.
Feature list
• Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical) • Ultra low capacitance C = 0.13 pF (typical) at voltage VR = 0 and frequencies f ≥ 1 GHz • Low forward resistance RF = 2.1 Ω (typical) at forward current IF = 10 mA and frequency f = 100 MHz • Low inductance Ls = 0.6 nH (typical) • Industry standard SC79 package (1.6 mm x 0.8 mm x 0.
BAR64-02V Datasheet
