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BAR64-02V Datasheet PDF

Infineon Technologies BAR64-02V

This Infineon cost optimized RF PIN diode is designed for low distortion switches that require to hold off large RF voltages, and is best suited for frequencies as high as 6 GHz. Its nominal 50 μm I-region width, combined with the typical 1.55 μs carrier lifetime, result in a diode with low forward resistance and low distortion characteristics.
Part No. BAR64-02V
Datasheet BAR64-02V Download
Manufacturer
Infineon Technologies
Description surface mount RF PIN diode
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BAR64-02V datasheet page 1 preview
BAR64-02V Low signal distortion, surface mount RF PIN diode Product description Feature list
● Low signal distortion, charge carrier lifetime trr = 1.55 µs (typical)
● Ultra low capacitance C = 0.13 pF (typical) at voltage VR = 0 and frequencies f ≥ 1 GHz
● Low forward resistance RF = 2.1 Ω (typical) at forward current IF = 10 mA and frequency f = 100 MHz
● Low inductance Ls = 0.6 nH (typical)
● Industry standard SC79 package (1.6 mm x 0.8 mm x 0.55 mm)
● Pb-free, RoHS compliant and halogen-free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Optimized for low bias current RF and high-speed interface switches and attenuators
● Wireless communication
● High speed data networks Device information Table 1 Part information Product name / Ordering code BAR64-02V / BAR6402VH6327XTSA1 Package SC79 Pin configuration Single, with leads Marking Pieces / Reel O 3k Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions!
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