BAR80 Datasheet PDF

MAXIMUM RATINGS

Parameter Diode reverse voltage Forward current Junction temperature Marking AAs 1=C Pin Configuration 2=A 3=C 4=A Package MW-4 Symbol VR IF Tj Top Tstg Value 35 100 150 -55 ... 125 -55 ... 150 Unit V mA °C Operating temperature range Storage temperature 1 Aug-17-2001 BAR80

ELECTRICAL CHARACTERISTICS

at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V Forward voltage IF = 100 mA AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance IF = 5 mA, f = 100 MHz Series inductance chip to ground Application information Shunt signal isolation Shunt insertion loss IF = 10 mA, f = 2 GHz, RG=RL =50 VR = 5 V, f = 2 GHz, RG=RL =50 SI IL Unit max. 20 1 nA V typ. - IR VF 0.8 CT 0.6 rf Ls 1 0.92 0.5 0.14 1.6 1.3 0.7 - pF nH - 23 0.15 - dB Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF 2 Aug-17-2...