Infineon Technologies BAR90-099L4
Silicon Deep Trench PIN Diodes
| Part No. | BAR90-099L4 |
|---|---|
| Datasheet | BAR90-099L4 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Deep Trench PIN Diodes |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Forward current Total power dissipation TS ≤ 133°C Junction temperature Operating temperature range Storage temperature Tj Top Tstg 150 -55 ... 125 -55 ... 150 °C Symbol VR IF Ptot Value 80 100 250 Unit V mA mW 1 Nov-02-2004 BAR90... Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 65 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Breakdown voltage I (BR) = 5 µA Reverse current VR = 60 V Forward voltage I F = 3 mA I F = 100 mA 1For Unit max. 50 V nA V typ. - V(BR) IR VF 80 - 0.75 - 0.81 0.9 0.87 1 calculation of RthJA please refer to Application Note Thermal Resistance 2 Nov-02-2004 BAR90...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 0 V, f = 100 MHz VR = 0 Symbol min. CT RP rf τ rr Values typ. max.
