Infineon Technologies BAS125-06W
Silicon Schottky Diodes
| Part No. | BAS125-06W |
|---|---|
| Datasheet | BAS125-06W Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Schottky Diodes |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Diode reverse voltage Forward current Surge forward current (t 100 s) Total power dissipation BAS125W, TS = 93 °C BAS 125-04W...06W Junction temperature Storage temperature , TS = 84 °C Symbol VR IF IFSM Ptot Ptot Tj Top Tstg Value 25 100 500 250 250 150 -55 ... 150 -55 ... 150 mW °C Unit V mA Operating temperature range Thermal Resistance Junction - soldering point1) BAS125W BAS125-04W...06W 1For calculation of R thJA please refer to Application Note Thermal Resistance RthJS K/W 230 265 1 Nov-15-2001 BAS125WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Rf CT Unit max. nA typ. IR VF 385 530 800 400 650 950 100 150 mV - 16 1.1 - pF 2 Nov-15-2001 BAS125W Forward current IF = f (TS ) BAS125W 100 mA 80...
