Infineon Technologies BAS125-07
Silicon Schottky Diode
| Part No. | BAS125-07 |
|---|---|
| Datasheet | BAS125-07 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Diode reverse voltage Forward current Marking 17s 1 = C1 Pin Configuration 2 = C2 3 = A2 4 = A1 Package SOT343 Symbol VR IF IFSM Ptot Tj Tstg Value 25 100 500 250 150 -55 ... 150 Unit V mA mW °C Surge forward current (t 100 s) Total power dissipation , TS = 96 °C Junction temperature Storage temperatureMAXIMUM RATINGS
Junction - soldering point1) RthJS 215 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-16-2001 BAS125-07WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current VR = 20 V VR = 25 V Forward voltage IF = 1 mA IF = 10 mA IF = 35 mA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Rf Unit max. nA typ. IR VF 385 530 800 400 650 950 100 150 mV CT - 16 1.1 - pF 2 Aug-16-2001 BAS125-07W Forward current IF = f (VF ) TA = Parameter 10 2 BAS 125... EHD07115 Total power dissipati...
