Infineon Technologies BAS16-02V
Silicon Switching Diode
| Part No. | BAS16-02V |
|---|---|
| Datasheet | BAS16-02V Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage VR Peak reverse voltage VRM Forward current IF BAS16 BAS16-02L, -07L4 BAS16-02V, -02W BAS16-03W BAS16S BAS16U BAS16W Non-repetitive peak surge forward current t = 1 µs, BAS16/ S/ U/ W/ -03W t = 1 µs, BAS16-02L/ -02V/ -02W/ -07L4 t=1s Total power dissipation BAS16, TS ≤ 54 °C BAS16-02L, -07L4, TS ≤ 130 °C BAS16-02V, -02W, TS ≤ 120 °C BAS16-03W, TS ≤ 116 °C BAS16S, TS ≤ 85 °C BAS16U, TS ≤ 113 °C BAS16W, TS ≤ 119 °C Junction temperature Storage temperature IFSM Ptot Tj Tstg BAS16... Value Unit 80 V 85 mA 250 200 200 250 200 200 250 A 4.5 2.5 0.5 mW 370 250 250 250 250 250 250 150 °C -65 ...150 2 2009-09-28 BAS16... Thermal Resistance Parameter Junction - soldering point1) BAS16, BAS16S BAS16-02L, -07L4 BAS16-02V, -02W BAS16-03W BAS16U BAS16W Symbol RthJS Value Unit K/W ≤ 260 ≤ 80 ≤ 120 ≤ 135 ≤ 150 ≤ 125ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max.
