Infineon Technologies BAS170
Silicon Schottky Diode
| Part No. | BAS170 |
|---|---|
| Datasheet | BAS170 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Diode reverse voltage Forward current Marking 7 Pin Configuration 1=C 2=A - Package SOD323 Symbol VR IF IFSM Ptot Tj Top Tstg Value 70 70 100 250 150 -55 ... 125 -55 ... 150 Unit V mA mW °C Surge forward current, t 10 ms Total power dissipation TS = 97 °C Junction temperature Operating temperature range Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For Symbol RthJS Value Unit K/W 190 calculation of RthJA please refer to Application Note Thermal Resistance 1 Aug-06-2001 BAS170WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter DC Characteristics Breakdown voltage I(BR) = 10 A Reverse current VR = 50 V VR = 70 V Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA VF 300 600 750 375 705 880 410 750 1000 IR 0.1 10 mV µA V(BR) 70 V Symbol min. Values typ. max. Unit AC Characteristics Diode capacitanceVR = 0 V, f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Charge carrier life time IF = 25 mA...
