Infineon Technologies BAS21
Silicon Switching Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR Peak reverse voltage VRM Forward current IF Peak forward current IFM Peak forward current IFM Surge forward current, t = 10 µs IFS Non-repetitive peak surge forward current IFSM Total power dissipation Ptot BAS21, TS ≤ 70°C BAS21-03W, TS ≤ 124°C BAS21U, TS ≤ 122°C Junction temperature Tj Storage temperature Tstg 1Pb-containing package may be available upon special request Marking JSs D JSs Value Unit 200 V 250 250 mA 625 625 mA 4 A - mW 350 250 250 150 °C -65 ... 150 1 2007-04-19 BAS21... Thermal Resistance Parameter Junction - soldering point1) BAS21 BAS21-03W BAS21U Symbol RthJS Value Unit K/W ≤ 230 ≤ 105 ≤ 110ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage V(BR) 250 - -V I(BR) = 100 µA Reverse current IR µA VR = 200 V - - 0.1 VR = 200 V, TA = 150 °C - - 100 Forward voltage VF V IF = 10...