Infineon Technologies BAS3010S-02LRH
Low VF Schottky Diode
| Part No. | BAS3010S-02LRH |
|---|---|
| Datasheet | BAS3010S-02LRH Download |
| Manufacturer |  Infineon Technologies |
| Description | Low VF Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage1) VR Forward current1), TS ≤ 114 °C IF Non-repetitive peak surge forward current (tp≤ 10 ms) IFSM Junction temperature Tj Operating temperature range Top Storage temperature Tstg Thermal Resistance Junction - soldering point2) RthJS 1For TA > 25 °C the derating of VR and IF has to be considered 2For calculation of RthJA please refer to Application Note Thermal Resistance Marking 1T Value Unit 30 V 1 A 4 150 °C -55 ...150 -65 ...150 ≤ 60 K/W 1 2011-06-08 BAS3010S-02LRHELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current1) IR µA VR = 10 V - - 30 VR = 30 V - - 300 Forward voltage1) VF mV IF = 1 mA - 200 250 IF = 100 mA - 340 390 IF = 700 mA - 500 570 IF = 1000 mA - 570 650 AC Characteristics Diode capacitance VR = 5 V, f = 1 MHz 1Pulsed test: tp = 300 µs; D = 0.01 CT - 10 15 pF 2 2011-06-08 BAS3010S-...
