Infineon Technologies BAT165
Medium Power AF Schottky Diode
| Part No. | BAT165 |
|---|---|
| Datasheet | BAT165 Download |
| Manufacturer |  Infineon Technologies |
| Description | Medium Power AF Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage2) Forward current2) VR IF Average rectified forward current (50/60Hz, sinus) IFAV Non-repetitive peak surge forward current (t ≤ 10ms) I FSM Value 40 750 500 2.5 Unit V mA mA A Total power dissipation TS ≤ 93°C Junction temperature Storage temperature Ptot 600 mW Tj 150 °C Tstg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point3) RthJS ≤ 95 1Pb-containing package may be available upon special request 2For TA > 25°C the derating of VR and IF has to be considered. Please refer to the atteched curves. 3For calculation of RthJA please refer to Application Note Thermal Resistance Unit K/W 1 2007-04-19 BAT165...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current1) VR = 30 V VR = 40 V VR = 40 V, TA = 65 °C IR - - 12 - - 50 - - 900 Forward voltage IF = 10 mA IF = 100 mA VF 0.23 0.
