Infineon Technologies BAT240A
Silicon Schottky Diode
| Part No. | BAT240A |
|---|---|
| Datasheet | BAT240A Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Schottky Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Diode reverse voltage Peak reverse voltage Forward current Marking 4Ms 1=C1/A2 Pin Configuration 2 = C2 3 = A1 Package SOT23 Symbol VR VRM IF IFSM Ptot Tj Tstg Value 240 250 400 1 400 80 -55 ... 150 Unit V mA A mW °C Surge forward current (t 10ms) Total power dissipation, TS = 28 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS 305 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-06-2001 BAT240AELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified. Parameter DC characteristics Breakdown voltage I(BR) = 500 µA Reverse current VR = 200 V VR = 240 Forward voltage IF = 10 mA IF = 20 mA IF = 50 mA VF 0.325 0.37 0.47 IR 5 500 V µA V(BR) 240 V Symbol min. Values typ. max. Unit AC characteristics Diode capacitance VR = 10 V, f = 1 MHz CT 11.5 pF 2 Jul-06-2001 BAT240A Forward current IF = f (TS ) Forward current IF = f (VF ) TA = parameter 500 mA 10 -1 A 400 350 10...
