Infineon Technologies BAT60A
Silicon Schottky Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage2) Forward current VR 10 V IF 3 A Non-repetitive peak surge forward current I FSM 5 (t ≤ 10ms) Total power dissipation Ptot 1350 mW TS ≤ 28°C Junction temperature Tj 150 °C Operating temperature range Top -55 ... 85 Storage temperature Tstg -55 ... 150 1Pb-containing package may be available upon special request 2For TA > 25 °C the derating of VR has to be considered. Please refer to curve Permissible reverse voltage. 1 2007-04-19 BAT60A... Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value Unit ≤ 90 K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current2) IR VR = 5 V - 0.3 1 VR = 8 V - 0.6 2.6 VR = 5 V, TA = 80 °C - 18 - Forward voltage2) VF IF = 10 mA 0.1 0.12 0.15 IF = 100 mA 0.15 0.2 0.23 IF = 1000 mA 0.22 0.3 0.37 Unit mA V AC Characteristics Diode capacitance C...