Infineon Technologies BAT68-06
Silicon Schottky Diodes
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Total power dissipation BAT68, TS ≤ 77°C BAT68-04, BAT68-06, TS ≤ 61°C BAT68-04W/-06W/-08S, TS ≤ 92°C BAT68-07W, TS ≤ 89°C Junction temperature Storage temperature VR IF Ptot Tj Tstg Thermal Resistance Parameter Junction - soldering point1) BAT68 BAT68-04, BAT68-06 BAT68-04W-BAT68-06W, BAT68-08S BAT68-07W Symbol RthJS Value 8 130 150 150 150 150 150 -55 ... 150 Value ≤ 490 ≤ 590 ≤ 390 ≤ 410 Unit V mA mW °C Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Breakdown voltage I(BR) = 10 µA Reverse current VR = 1 V VR = 1 V, TA = 60 °C Forward voltage IF = 1 mA IF = 10 mA V(BR) IR VF 8- - - - 0.1 - - 1.2 - 318 340 340 390 500 Unit V µA mV 1For calculation of RthJA please refer to Application Note Thermal Resistance 2 2011-06-15 BAT68...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max.