Infineon Technologies BAV74
Silicon Switching Diode Array
MAXIMUM RATINGS
Parameter Diode reverse voltage Peak reverse voltage Forward current Marking JAs 1 = A1 Pin Configuration 2 = A2 3 = C1/2 Package SOT23 Symbol VR VRM IF IFS Ptot Tj Tstg Value 50 50 200 4.5 250 150 -65 ... 150 Unit V mA A mW °C Surge forward current, t = 1 s Total power dissipation, TS = 35 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) RthJS 460 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Jul-31-2001 BAV74ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 100 mA Reverse current VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time measured at IR = 1mA IF = 10 mA, IR = 10 mA, RL = 100 , trr 4 CD 2 IR 100 IR 0.1 VF 1 V(BR) 50 typ. max. Unit V µA pF ns Test circuit for reverse recovery time D.U.T...