Infineon Technologies BAW156
Silicon Low Leakage Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t=1s Total power dissipation Ts ≤ 31°C Junction temperature Storage temperature Ptot Tj Tstg Value 80 85 200 4.5 0.5 250 150 -65 ... 150 Unit V mA A mW °C Thermal Resistance Parameter Junction - soldering point2) BAW156 Symbol RthJS Value ≤ 360 Unit K/W 1Pb-containing package may be available upon special request 2For calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-20 BAW156...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified P