Infineon Technologies BAW56
Silicon Switching Diode
| Part No. | BAW56 |
|---|---|
| Datasheet | BAW56 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Switching Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Non-repetitive peak surge forward current t = 1 µs VR VRM IF IFSM t = 1 ms t = 1 s, single t = 1 s, double Value 80 85 200 4.5 1 0.5 0.75 Total power dissipation BAW56, TS ≤ 28°C BAW56S, TS ≤ 85°C BAW56U, TS ≤ 90°C BAW56W, TS ≤ 103°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BAW56 BAW56S BAW56U BAW56W Ptot Tj Tstg Symbol RthJS 330 250 250 250 150 -65 ... 150 Value 360 260 240 190 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mW °C Unit K/W 2 2007-09-19 BAW56...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Breakdown voltage I(BR) = 100 µA V(BR) 85 - -V Reverse current VR = 70 V VR = 25 V, TA = 150 °C VR = 70 V, TA = 150 °C IR µA - - 0.15 - - 30 - - 50 Forward voltage IF =...
