Infineon Technologies BAW78D
Silicon Switching Diodes
| Part No. | BAW78D |
|---|---|
| Datasheet | BAW78D Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Switching Diodes |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Diode reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation BAW78D, TS ≤ 125°C BAW79D, TS ≤ 115°C Junction temperature Storage temperature Thermal Resistance Parameter 400 400 1 1 10 V A W 1 1 Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 25 ≤ 35 °C Unit Junction - soldering point1) BAW78D BAW79D 1 K/W Feb-03-2003 BAW78.../BAW79... 1For calculation of RthJA please refer to Application Note Thermal ResistanceELECTRICAL CHARACTERISTICS
at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics 400 V Breakdown voltage V(BR) I (BR) = 100 µA Reverse current VR = 400 V VR = 400 V, TA = 150 °C Forward voltage IF = 1 A IF = 2 A AC Characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time I F = 200mA, I R = 200mA, measured at I R = 20mA RL = 100 Test circuit for reverse recovery time D.U.T. IR - 1 50...
