Infineon Technologies BAW78M
Silicon Switching Diode
MAXIMUM RATINGS
Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking GDs 1=A Pin Configuration Package 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Symbol VR VRM IF IFM IFS Ptot Tj Tstg Values 400 400 1 1 10 1 150 -65 ... 150 Unit V A Surge forward current, t = 1 s Total power dissipation , TS 110 °C Junction temperature Storage temperature W °C Thermal Resistance Junction - soldering point 1) RthJS 40 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-21-2001 BAW78MELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 A IF = 2 A Reverse current VR = 400 V Reverse current VR = 400 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA trr 1 µs CD 10 pF Symbol min. V(BR) VF IR IR 400 Values typ. max. - Unit V - 1.6 2 1 50...