BAW79B Datasheet PDF

MAXIMUM RATINGS

Parameter Diode reverse voltage Peak reverse voltage Forward current Peak forward current Marking GE GF GG GH 1 = A1 1 = A1 1 = A1 1 = A1 Pin Configuration 2 = C1/2 2 = C1/2 2 = C1/2 2 = C1/2 3 = A2 3 = A2 3 = A2 3 = A2 Package SOT89 SOT89 SOT89 SOT89 Symbol VR VRM IF IFM IFS Ptot Tj Tstg BAW 79A 50 50 BAW 79B 100 100 1 1 10 1 BAW 79C 200 200 BAW 79D 400 400 Unit V A Surge forward current, t = 1 s Total power dissipation , TS = 115 °C Junction temperature Storage temperature W °C 150 -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 35 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Aug-20-2001 BAW79A...BAW79D

ELECTRICAL CHARACTERISTICS

at TA = 25°C, unless otherwise specified. Symbol Values Parameter min. DC characteristics Breakdown voltage I(BR) = 100 µA BAW79A BAW79B BAW79C BAW79D Forward voltage IF = 1 A IF = 2 A Reverse current VR = VRmax Reverse current VR = VRmax , TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 , measured at IR = 20mA trr 1 CD 10 - Unit max.