Infineon Technologies BB439
Silicon Variable Capacitance Diode
| Part No. | BB439 |
|---|---|
| Datasheet | BB439 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capacitance Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 125 -55 ... 150 mA °C Symbol VR VRM Value 28 30 Unit V 1 Jul-09-2003 BB439...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 28 V VR = 28 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 25 V, f = 1 MHz CT Unit max. nA typ. IR 20 200 pF 31.5 26.5 4.3 43 34.5 29 5.1 6.9 5.8 0.35 37.5 31.5 6 8 6.5 3 0.5 % Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz CT2 /CT25 CT3 /CT25 6 5 - Capacitance ratio VR = 3 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 3 V, VR = 25 V, f = 1 MHz CT/CT rS Q Series resistance VR = 10 V, f = 100 MHz Figure of merit VR = 3 V, f = 50 MHz VR = 25 V, f = 200 MHz 1For - 280 600 - details please refer to Application Note 047.
