Infineon Technologies BB555
Silicon Tuning Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R 5k Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V 1 Nov-07-2002 BB535 /BB555...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °CELECTRICAL CHARACTERISTICS
Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 200 Symbol min. Values typ. max. Unit pF 17.5 14.01 2.05 1.9 18.7 15 2.24 2.1 8.9 6.7 20 16.1 2.4 2.3 9.8 7.5 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT2 /CT25 8.2 6 - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, CT/CT rS BB535 VR = 1V to 28V, f = 1 MHz, 4 diodes sequence...