Infineon Technologies BB565
Silicon Variable Capcitance Diode
| Part No. | BB565 |
|---|---|
| Datasheet | BB565 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capcitance Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R 5k Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V 1 Nov-07-2002 BB545 /BB565...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 200 pF 18.5 13.2 1.85 1.8 20 14.8 2.07 2 10 7.2 21.5 16.4 2.28 2.2 11 8.1 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT2 /CT25 9 6.3 - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, CT/CT rS BB545 VR = 1V to 28V, f = 1 MHz, 4 diodes sequence, 0.5 0.7 0.6 2.5 1.5 2 - BB565/ -02V VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, BB565/ -02V Series resistance VR = 3 V, f = 470 MHz 1For - details please refer to Application Note 047 2 Nov-07-2002 BB545 /BB565...
