Infineon Technologies BB659C
Silicon Variable Capacitance Diode
| Part No. | BB659C |
|---|---|
| Datasheet | BB659C Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capacitance Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg 30 35 20 -55 ... 150 -55 ... 150 V mA °C 1 Nov-07-2002 BB639C/BB659C...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 200 pF 36.5 27 2.5 2.4 39 30.2 2.72 2.55 15.3 11.1 42 33.2 3.05 2.75 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT2 /CT25 14.2 9.5 Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1V to 28V, f = 1 MHz, 7 diodes sequence, CT/CT rS BB639C VR = 1V to 28V , f = 1 MHz, 4 diodes sequence, 0.3 0.5 0.6 2.5 1 2 0.7 BB659C/-02V VR = 1V to 28V, f = 1 MHz, 7 dio...
