Infineon Technologies BB664
Silicon Variable Capacitance Diodes
| Part No. | BB664 |
|---|---|
| Datasheet | BB664 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capacitance Diodes |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage R ≥ 5kΩ Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V 1 Jun-01-2004 BB644 /BB664...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Reverse current typ. max. nA 10 100 Unit IR VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT pF 39 29.4 2.5 2.4 41.8 31.85 2.7 2.55 16.4 11.8 0.6 44.5 34.2 2.85 2.75 17.8 12.6 2 0.75 % Ω Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1/C T28 CT2/C T25 ∆CT/C T rS 15 11 - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Jun-01-2004 BB644 /BB664...
