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BB669 Datasheet PDF

Infineon Technologies BB669

Silicon Tuning Diode

Part No. BB669
Datasheet BB669 Download
Manufacturer
Infineon Technologies
Description Silicon Tuning Diode
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BB669 datasheet page 1 preview

MAXIMUM RATINGS

Parameter Diode reverse voltage Peak reverse voltage (R 5k ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55... 150 -55... 150 mA °C Unit V 1 Jul-05-2001 BB669

ELECTRICAL CHARACTERISTICS

at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 °C AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance ratio 1) VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 8 V, f = 470 MHz Series inductance Ls 1.8 nH 1) In-line matching. For details please refer to Application Note 047 Symbol min. IR IR - Values typ. max. 10 200 Unit nA CT 51 39.6 2.6 2.5 CT2 /CT25 CT1 /CT28 14.5 18 56.5 43.4 2.8 2.7 15.5 20.9 0.85 61.5 47.2 3 2.9 17 23.3 2 - pF - CT /CT rs % 2 Jul-05-2001 BB6...
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