Infineon Technologies BB679
Silicon Variable Capacitance Diode
| Part No. | BB679 |
|---|---|
| Datasheet | BB679 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capacitance Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55 ... 125 -55 ... 150 mA °C Unit V 1 Oct-25-2002 BB679...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 10 100 pF 43.5 33 2.55 2.4 47.5 36 2.75 2.6 18.3 13.1 0.6 51.5 38.8 2.95 2.8 20 14.5 2 0.8 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 16.5 CT2 /CT25 - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz 12 - Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz CT/CT rS Series resistance VR = 5 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Oct-25-2002 BB679... Diode cap...
