Infineon Technologies BB689
Silicon Tuning Diode
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V 1 Mar-27-2003 BB669/BB689...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C IR 10 200 nA typ. max. UnitELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Symbol min. Values typ. max. Unit pF 51 39.6 2.6 2.5 56.5 43.4 2.8 2.7 20.9 15.5 0.85 61.5 47.2 3 2.9 23.2 17 2 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 CT2 /CT25 18 14.5 - - Capacitance ratio VR = 2 V, VR = 25 V, f = 1 MHz Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz CT/CT rS Series resistance VR = 8 V, f = 470 MHz 1For details please refer to Application Note 047 2 Mar-27-2003 BB669/BB689...