Infineon Technologies BB831
Silicon Variable Capacitance Diodes
| Part No. | BB831 |
|---|---|
| Datasheet | BB831 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capacitance Diodes |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 125 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V 1 Nov-07-2002 BB831...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA typ. IR 20 500 pF 7.8 0.85 8.8 1.02 8.6 1 9.8 1.2 9.5 3 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 7.8 - Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz CT/CT rS Series resistance VR = 1 V, f = 100 MHz 1For details please refer to Application Note 047. 2 Nov-07-2002 BB831... Diode capacitance CT = (VR) f = 1MHz BB 811 EHD07053 Temperature coefficient of the diode capacitance TCc = (VR ) 10 -3 12 CT pF 10 1/°C 8 TC C 10 -4 10 -5 0...
