Infineon Technologies BB833
Silicon Tuning Diodes
| Part No. | BB833 |
|---|---|
| Datasheet | BB833 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Tuning Diodes |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Diode reverse voltage Peak reverse voltageR 5k Forward current Operating temperature range Storage temperature IF Top Tstg 20 -55 ... 150 -55 ... 150 mA °C Symbol VR VRM Value 30 35 Unit V 1 Nov-07-2002 BB833...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz CT Unit max. nA 20 500 typ. - IR - pF 8.5 0.6 9.3 0.75 12.4 1.8 10 0.9 3 % Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz CT1 /CT28 11 - Capacitance matching1) VR = 1 V, VR = 28 V, f = 1 MHz CT/CT rS Series resistance VR = 1 V, f = 470 MHz 1For details please refer to Application Note 047. 2 Nov-07-2002 BB833... Diode capacitance CT = (VR) f = 1MHz BB 833 EHD07121 Temperature coefficient of the diode capacitance TCc = (VR ) 10 -3 12 CT pF 10 1/°C TCc 10 -4 10 -5 -1 10 8 6...
