Infineon Technologies BB837
Silicon Tuning Diode
| Part No. | BB837 |
|---|---|
| Datasheet | BB837 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Tuning Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25 °C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage R ≥ 5kΩ VR VRM Forward current Operating temperature range Storage temperature IF Top TStg Value 30 35 20 -55 ...150 -55 ...150 Unit V mA °C 1 2014-03-31 BB837/BB857...ELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 30 V VR = 30 V, TA = 85 °C IR - - 10 - - 200 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 25 V, f = 1 MHz VR = 28 V, f = 1 MHz CT 6 6.6 7.2 0.5 0.55 0.65 0.45 0.52 - Capacitance ratio VR = 1 V, VR = 25 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching1) VR = 1V ... 28V, f = 1 MHz, 7 diodes sequence CT1/CT25 10.2 CT1/CT28 9.7 ∆CT/CT - 12 12.7 - 5 Series resistance VR = 5 V, f = 470 MHz rS - 1.5 - 1For details please refer to Application Note 047 Unit nA pF - % Ω 2 2014-03-31 BB837/BB857... Diode capacitance CT...
