Infineon Technologies BB844
Silicon Variable Capacitance Diode
| Part No. | BB844 |
|---|---|
| Datasheet | BB844 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capacitance Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Peak reverse voltage Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg Value 18 20 50 -55 ... 150 -55 ... 150 Unit V mA °C 1 Nov-07-2002 BB844ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 85 °C AC Characteristics Diode capacitance VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 8 V, f = 1 MHz CT Unit max. nA 20 200 typ. - IR - pF 42.5 25 10 43.75 27 11.5 3.8 0.28 45 29 13 1.5 % Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz CT2 /CT8 3.2 - Capacitance matching1) VR = 2V to 8V , f = 1 MHz CT/CT rS Series resistance VR = 2 V, f = 100 MHz 1For details please refer to Application Note 047. 2 Nov-07-2002 BB844 Diode capacitance CT = (VR ) f = 1MHz Capacitance ratio CTref /CT = (VR ) f = 1MHz 5 90 pF CTref/C T 70 60 50 4 3.5 3 2.5 CT1V/CT CT2V/CT CT 40 2 30...
