Infineon Technologies BB914
Silicon Variable Capacitance Diode
| Part No. | BB914 |
|---|---|
| Datasheet | BB914 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Variable Capacitance Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage Peak reverse voltage ( R 5k ) Forward current Operating temperature range Storage temperature VR VRM IF Top Tstg 18 20 50 -55 ... 125 -55 ... 150 V mA °C 1 Dec-04-2002 BB914...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Parameter min. DC Characteristics Reverse current VR = 16 V VR = 16 V, TA = 85 °C AC Characteristics Diode capacitance VR = 2 V, f = 1 MHz VR = 8 V, f = 1 MHz CT Unit max. nA 20 200 typ. - IR - pF 42.5 17.6 43.75 18.7 2.34 0.28 45 19.75 2.42 1.5 % Capacitance ratio VR = 2 V, VR = 8 V, f = 1 MHz CT2 /CT8 2.28 - Capacitance matching1) VR = 2 V, VR = 8 V, f = 1 MHz CT/CT rS Series resistance VR = 2 V, f = 100 MHz 1For details please refer to Application Note 047. 2 Dec-04-2002 BB914... Diode capacitance CT = (VR ) f = 1MHz 100 pF Capacitance ratio CTref /CT = (VR ) f = 1MHz 5 - 70 CTref / C T 80 4 3.5 3 2.5 2 1.5 1 0.5 1V CT 60 5...
