Infineon Technologies BBY57
Silicon Tuning Diode
| Part No. | BBY57 |
|---|---|
| Datasheet | BBY57 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Tuning Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage VR Forward current IF Operating temperature range Top Storage temperature Tstg 1Pb-containing package may be available upon special request LS(nH) 0.4 0.6 0.6 1.4 Marking 55 5 55 D5s Value 10 20 -55 ... 125 -55 ... 150 Unit V mA °C 1 2007-04-20 BBY57...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Reverse current VR = 8 V VR = 8 V, TA = 85 °C IR nA - - 10 - - 100 AC Characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 2.5 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz CT pF 16.5 17.5 18.6 - 9.35 - 74 4.7 5.5 Capacitance ratio VR = 1 V, VR = 3 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Series resistance VR = 1 V, f = 470 MHz, BBY57-02L VR = 1 V, f = 470 MHz, all others CT1/CT3 CT1/CT4 rS - 2.45 - 3 3.7 4.5 Ω - 0.35 - 0.3 - 2 2007-04-20 BBY57... Diode capacitance CT = ƒ (VR) f =...
