Infineon Technologies BBY65
Silicon Tuning Diode
| Part No. | BBY65 |
|---|---|
| Datasheet | BBY65 Download |
| Manufacturer |  Infineon Technologies |
| Description | Silicon Tuning Diode |
| Buy | Stock & Price |
MAXIMUM RATINGS
at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage Forward current Operating temperature range Storage temperature VR IF Top Tstg LS(nH) Marking 0.6 F Value 15 50 -55 ... 150 -55 ... 150 Unit V mA °C 1 2011-06-15 BBY65...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max. DC Characteristics Reverse current VR = 10 V VR = 10 V, TA = 85 °C IR - - 10 - - 100 AC Characteristics Diode capacitance VR = 0.3 V, f = 1 MHz VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4.7 V, f = 1 MHz CT 28.2 29.5 30.8 - 20.25 - 9.8 - 4.45 2.6 2.7 2.8 Capacitance ratio VR = 0.3 V, VR = 4.7 V Capacitance ratio VR = 1 V, VR = 3 V Series resistance VR = 1 V, f = 470 MHz CT0.3/ CT4.7 CT1/CT3 rS 10 10.9 - 4.55 - 0.6 0.9 Unit nA pF pF pF Ω 2 2011-06-15 CT Diode capacitance CT = ƒ (VR) f = 1MHz 40 pf 30 25 20 15 10 5 00 1 2 3 V 5 VR BBY65... 3 2011-06-15 Package SC79 BBY65... 4 2011-06-15 BBY65... Dat...
