Infineon Technologies BC817
NPN Silicon AF Transistors
| Part No. | BC817 |
|---|---|
| Datasheet | BC817 Download |
| Manufacturer |  Infineon Technologies |
| Description | NPN Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg RthJS BC817 BC818 45 25 50 30 5 5 500 1 100 200 330 150 -65 ... 150 215 1For calculation of RthJA please refer to Application Note Thermal Resistance Unit V mA A mA mW °C K/W 1 Nov-29-2001 BC817, BC818ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 10 mA, IB = 0 BC817 45 - BC818 25 - V - Collector-base breakdown voltage V(BR)CBO IC = 10 µA, IE = 0 BC817 50 - - BC818 30 - - Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA =...
