BC850BT Datasheet PDF

MAXIMUM RATINGS

Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 109 °C Junction temperature Storage temperature Thermal Resistance Junction - soldering point1) Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 mA, IB = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 IC = 10 µA, IE = 0 BC846T BC847T/BC850T BC848T/BC849T V(BR)CBO 80 50 30 BC846T BC847T/850T BC848T/849T V(BR)CEO 65 45 30 V RthJS 165 Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC846T 65 80 80 6 BC847T BC848T BC850T BC849T 45 50 50 6 100 200 200 200 250 150 -65 ... 150 30 30 30 5 Unit V mA mA mW °C K/W Unit max.

ELECTRICAL CHARACTERISTICS

at TA = 25°C, unless otherwise specified. Symbol min. Values typ. Collector-base breakdown voltage 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Aug-01-2002 BC846T...BC850T

ELECTRICAL CHARACTERISTICS

at TA = 25°C, unless otherwise specified.