Infineon Technologies BC856AW
PNP Silicon AF Transistors
| Part No. | BC856AW |
|---|---|
| Datasheet | BC856AW Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon AF Transistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 124 °C Junction temperature Storage temperature Symbol VCEO VCBO VCES VEBO IC ICM IBM IEM Ptot Tj Tstg BC856W BC857W BC858W Unit BC860W BC859W 65 80 80 5 45 50 50 5 100 200 200 200 250 150 -65 ... 150 mW °C 30 30 30 5 mA mA V Thermal Resistance Junction - soldering point 1) RthJS 105 K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified. Parameter DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 BC856W BC857/860W BC858/859W Symbol min. V(BR)CEO Values typ. max. Unit V 65 45 30 - Collector-base breakdown voltage IC = 10 µA, IE = 0 BC856W BC857/860W BC858/859W V(BR)CBO 80 50 30 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Dec-11-2001 BC856W...BC860WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified.
