Infineon Technologies BC857AT
PNP Silicon AF Transistor
| Part No. | BC857AT |
|---|---|
| Datasheet | BC857AT Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon AF Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Marking 3Es 3Fs 1=B 1=B Pin Configuration 2=E 2=E 3=C 3=C Package SC75 SC75 Symbol VCEO VCBO VCES VEBO IC ICM Ptot Tj Tstg Value 45 50 50 5 100 200 250 150 -65 ... 150 Unit V Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage DC collector current Peak collector current Total power dissipation, TS = 109 °C Junction temperature Storage temperature mA mW °C Thermal Resistance Junction - soldering point 1) RthJS 165 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-29-2001 BC857TELECTRICAL CHARACTERISTICS
at TA = 25 °C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Emitter-base breakdown voltage IE = 1 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V...
