Infineon Technologies BCR162
PNP Silicon Digital Transistor
| Part No. | BCR162 |
|---|---|
| Datasheet | BCR162 Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR162, TS ≤ 102°C BCR162F, TS ≤ 128°C BCR162L3, TS ≤ 135°C BCR162T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR162 BCR162F BCR162L3 BCR162T 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 15 100 200 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 °C Unit K/W 2 Aug-29-2003 BCR162...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(off) Vi(on) R1 R1/R 2 50 20 0.8 1 3.2 0.9 - 4.7 1 200 3 100 1.61 0.3 1.5 2.5 6...
