Infineon Technologies BCR183
PNP Silicon Digital Transistor
| Part No. | BCR183 |
|---|---|
| Datasheet | BCR183 Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR183, TS ≤ 102°C BCR183F, TS ≤ 128°C BCR183L3, TS ≤ 135°C BCR183S, T S ≤ 115°C BCR183T, TS ≤ 109C BCR183U, TS ≤ 118°C BCR183W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR183 BCR183F BCR183L3 BCR183S BCR183T BCR183U BCR183W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 20 100 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 133 ≤ 105 °C Unit K/W 2 Nov-17-2003 BCR183...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0...
