Infineon Technologies BCR189F
PNP Silicon Digital Transistor
| Part No. | BCR189F |
|---|---|
| Datasheet | BCR189F Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR189, TS ≤ 102°C BCR189F, TS ≤ 128°C BCR189L3, TS ≤ 135°C BCR189T, TS ≤ 109°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) BCR189 BCR189F BCR189L3 BCR189T 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 30 100 200 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 150 ... -65 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 °C Unit K/W 2 Aug-29-2003 BCR189...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0,4 0,5 15 - 22 200 3 100 630 0,3 0,8 1,1 29 kΩ Emit...
