Infineon Technologies BCR191T
PNP Silicon Digital Transistor
| Part No. | BCR191T |
|---|---|
| Datasheet | BCR191T Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR191, TS ≤ 102°C BCR191F, TS ≤ 128°C BCR191L3, TS ≤ 135°C BCR191S, T S ≤ 115°C BCR191T, TS ≤ 109°C BCR191W, TS ≤ 124°C SEMB1, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR191 BCR191F BCR191L3 BCR191S BCR191T BCR191W SEMB1 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 30 100 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 150 ... -65 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 105 ≤ 300 °C Unit K/W 2 May-18-2004 BCR191.../SEMB1ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE =...
