Infineon Technologies BCR192L3
PNP Silicon Digital Transistor
| Part No. | BCR192L3 |
|---|---|
| Datasheet | BCR192L3 Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR192, TS ≤ 102°C BCR192F, TS ≤ 128°C BCR192L3, TS ≤ 135°C BCR192T, TS ≤ 109°C BCR192U, TS ≤ 118°C BCR192W, TS ≤ 124°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR192 BCR192F BCR192L3 BCR192T BCR192U BCR192W 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 50 30 100 200 250 250 250 250 250 150 150 ... -65 Value ≤ 240 ≤ 90 ≤ 60 ≤ 165 ≤ 133 ≤ 105 Unit V mA mW Tj Tstg Symbol RthJS °C Unit K/W 2 Aug-29-2003 BCR192...ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO I CBO I EBO h FE VCEsat Vi(o...
