Infineon Technologies BCR198T
PNP Silicon Digital Transistor
| Part No. | BCR198T |
|---|---|
| Datasheet | BCR198T Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR198, TS ≤ 102°C BCR198F, TS ≤ 128°C BCR198L3, TS ≤ 135°C BCR198S, T S ≤ 115°C BCR198T, TS ≤ 109°C BCR198W, TS ≤ 124°C SEMB2, TS ≤ 75°C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 1) BCR198 BCR198F BCR198L3 BCR198S BCR198T BCR198W SEMB2 1For calculation of R thJA please refer to Application Note Thermal Resistance Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 10 50 70 200 250 250 250 250 250 250 Unit V mA mW Tj Tstg Symbol RthJS 150 -65 ... 150 Value ≤ 240 ≤ 90 ≤ 60 ≤ 140 ≤ 165 ≤ 124 ≤ 300 °C Unit K/W 2 Jun-16-2004 BCR198.../SEMB2ELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE =...
