Infineon Technologies BCR199T
PNP Silicon Digital Transistor
| Part No. | BCR199T |
|---|---|
| Datasheet | BCR199T Download |
| Manufacturer |  Infineon Technologies |
| Description | PNP Silicon Digital Transistor |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter UBs UB UBs 1=B 1=B 1=B 2=E 2=E 2=E 3=C 3=C 3=C - - - TSFP-3 TSLP-3-4 SC75 Symbol VCEO VCBO VEBO Vi(on) IC Ptot Value 50 50 5 50 70 250 250 250 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on voltage Collector current Total power dissipationBCR199F, TS ≤ 128°C BCR199L3, TS ≤ 135°C BCR199T, TS ≤ 109°C Junction temperature Storage temperature 1 mA mW Tj Tstg 150 -65 ... 150 °C Aug-29-2003 BCR199... Thermal Resistance Parameter Junction - soldering point1) BCR199F BCR199L3 BCR199T Symbol RthJS Value ≤ 90 ≤ 60 ≤ 165 Unit K/WELECTRICAL CHARACTERISTICS
at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 V(BR)CBO V(BR)EBO I CBO h FE VCEsat Vi(off) Vi(on) R1 50 5 120 0.4 0.5 32 - 47 200 3 100 630 0.3 0.8 1.5 62 kΩ Emitter-base breakdown voltage IE = 10 µA, IC...
